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Ultraviolet Electroluminescence from ZnS@ZnO Core-Shell Nanowires/p-GaN Introduced by Exciton Localization.
| Content Provider | Semantic Scholar |
|---|---|
| Author | Fang, Xuan Wei, Zhipeng Yang, Yingtao Chen, Rui Li, Yongfeng Tang, Jilong Fang, Dan Dan Jia, Huimin Wang, Dengkui Fan, Jie Ma, Xiaohui Yao, Bin Wang, Xiaohua |
| Copyright Year | 2016 |
| Abstract | We investigate the electroluminescence (EL) from light emitting diodes (LEDs) of ZnO nanowires/p-GaN structure and ZnS@ZnO core-shell nanowires/p-GaN structure. With the increase of forward bias, the emission peak of ZnO nanowires/p-GaN structure heterojunction shows a blue-shift, while the ZnS@ZnO core-shell nanowires/p-GaN structure demonstrates a changing EL emission; the ultraviolet (UV) emission at 378 nm can be observed. This discrepancy is related to the localized states introduced by ZnS particles, which results in a different carrier recombination process near the interfaces of the heterojunction. The localized states capture the carriers in ZnO nanowires and convert them to localized excitons under high forward bias. A strong UV emission due to localized excitons can be observed. Our results indicated that utilizing localized excitons should be a new route toward ZnO-based ultraviolet LEDs with high efficiency. |
| Starting Page | 1 |
| Ending Page | 10 |
| Page Count | 10 |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://eee.sustc.edu.cn/p/chenrui/publication/2016/acsami.5b08961.pdf |
| PubMed reference number | 26710654v1 |
| Alternate Webpage(s) | https://doi.org/10.1021/acsami.5b08961 |
| DOI | 10.1021/acsami.5b08961 |
| Journal | ACS applied materials & interfaces |
| Volume Number | 8 |
| Issue Number | 3 |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Immunoglobulin lambda-Chains Nanowires Zinc Oxide |
| Content Type | Text |
| Resource Type | Article |
