Current-voltage characteristics of Si/Si1 − xGex heterodiodes fabricated by direct bonding

Content Provider	Semantic Scholar
Author	Grekhov, I. V. Belyakova, E. I. Kostina, L. S. Rozhkov, Alexander Yusupova, Sh. A. Sorokin, Lydia M. Argunova, Tatiana S. Abrosimov, Nikolay V. Matchanov, N. A. Je, Junho
Copyright Year	2008
Abstract	We have studied the current-voltage (I–U) characteristics of Si/Si1 − xGex (0.02 < x < 0.15) heterodiodes fabricated by direct bonding of (111)-oriented n-type single crystal silicon wafers with p-type Si1 − xGex wafers of the same orientation containing 2–15 at % Ge. An increase in the germanium concentration NGe in Si1 − xGex crystals is accompanied by a growth in the density of crystal lattice defects, which leads to a decrease in the minority carrier lifetime in the base of the heterodiode and an increase in the recombination component of the forward current and in the differential resistance (slope) of the I–U curve. However, for all samples with NGe ≤ 15 at %, the I–U curves of Si/Si1 − xGex heterodiodes are satisfactory in the entire range of current densities (1 mA/cm2–200 A/cm2). This result shows good prospects for using direct bonding technology in the fabrication of Si/Si1 − xGex heterostructures.
Starting Page	1027
Ending Page	1029
Page Count	3
File Format	PDF HTM / HTML
DOI	10.1134/S1063785008120110
Volume Number	34
Alternate Webpage(s)	https://page-one.springer.com/pdf/preview/10.1134/S1063785008120110
Alternate Webpage(s)	https://doi.org/10.1134/S1063785008120110
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article