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Single-electron Detection and Memory Using a Single Carbon Nanotube Defect
| Content Provider | Semantic Scholar |
|---|---|
| Author | Chen, Yung-Fu Fuhrer, Michael S. |
| Copyright Year | 2002 |
| Abstract | A single scattering center in a p-type semiconducting carbon nanotube is used as a single-electron sensitive electrometer with charge noise <0.1 e/Hz at a temperature of 200 K. A single-electron memory is demonstrated using the nanotube electrometer as the readout device and a charge trap in the SiO2 dielectric as the storage node. Controlled switching between discrete charge states corresponding to a difference of one electron at the storage node is detected by the electrometer as discrete current steps of more than 70 nA, with quantized threshold voltage shifts of ~200mV in the transistor transfer characteristics. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www.physics.umd.edu/condmat/mfuhrer/publications/ECS2002.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
