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Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.
| Content Provider | Semantic Scholar |
|---|---|
| Author | Wolford, Donald James Bernholc, Jerzy Haller, Eugene E. |
| Copyright Year | 1990 |
| Abstract | Preface Acknowledgments Materials Research Society symposium proceedings Part I. Electronic Structure - Deep Levels Part II. Electronic Structure - Shallow Impurities Part III. Electronic Structures - Native Defects, Complexes, Transition Metals in Compounds Part IV. Electronic Structure - Complexes in Silicon Part V. Electronic Structure - Superlattices Part VI. Hydrogen in Silicon Part VII. Hydrogen in III-Vs Part VIII. Diffusion in Silicon and Germanium Part IX. Diffusion in Compounds Part X. Diffusion in Superlattices Part XI. DX Centers Part XII. EL2 Centers Part XIII. Doping in III-Vs Part XIV. Ordering in Alloys Part XV. Processing of Silicon and Germanium Part XI. Processing of Compounds Author index Subject index. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://assets.cambridge.org/97815589/90517/frontmatter/9781558990517_frontmatter.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
