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Cathodoluminescence Studies of InGaN/GaN Multiple Quantum Well Structure Grown by Metal Organic Chemical Vapor Deposition
| Content Provider | Semantic Scholar |
|---|---|
| Author | Li, Ying Lu, Frank Ramos, Frank Stokes, Edward Brittain |
| Copyright Year | 2013 |
| Abstract | Scanning Electron Microscope (SEM) – Cathodoluminescence (CL) system is applied to InGaN/GaN Multiple Quantum Well (MQW) structure grown by Metal Organic Chemical Vapor Deposition (MOCVD). Emission from MQW and n-GaN layer beneath at various electron beam (EB) voltages show that MQW layer tends to have better luminescence efficiency grown on GaN layer with fewer defects. It is observed that areas with higher emission intensity always show a red shift in emission wavelength. It therefore indicates that high resolution CL system is able to image the Indium inhomogeneities formed during the epitaxial growth process in nanoscale. |
| Starting Page | 31 |
| Ending Page | 38 |
| Page Count | 8 |
| File Format | PDF HTM / HTML |
| DOI | 10.1149/05302.0031ecst |
| Volume Number | 53 |
| Alternate Webpage(s) | https://ecs.confex.com/ecs/223/webprogram/Abstract/Paper13883/E9-0919.pdf |
| Alternate Webpage(s) | https://doi.org/10.1149/05302.0031ecst |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
