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Luminescence quenching in erbium‐doped hydrogenated amorphous silicon
| Content Provider | Semantic Scholar |
|---|---|
| Author | Shin, Jung Han Serna, Rosalía Hoven, Gerlas N. Van Den Polman, Albert Sark, W. G. J. H. M. Van Vredenberg, Arjen M. |
| Copyright Year | 1996 |
| Abstract | Hydrogenated amorphous silicon thin films are doped with erbium by ion implantation. Room‐temperature photoluminescence at 1.54 μm, due to an intra‐4f transition in Er4+, is observed after thermal annealing at 300–400 °C. Excitation of Er3+ is shown to be mediated by photocarriers. The Er3+ luminescence intensity is quenched by a factor of 15 as the temperature is raised from 10 K to room temperature. Codoping with oxygen (1 at. %) reduces the luminescence quenching to a factor of 7. The quenching is well correlated with a decrease in luminescence lifetime, indicating that nonradiative decay of excited Er3+ is the dominant quenching mechanism as the temperature is increased. |
| Starting Page | 46 |
| Ending Page | 48 |
| Page Count | 3 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.116751 |
| Volume Number | 68 |
| Alternate Webpage(s) | http://www.erbium.nl/wp-content/uploads/2016/08/Luminescence_quenching_in_erbium_doped_hydrogenated_amorphous_Si_-_Appl_Phys_Lett_1996.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.116751 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
