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Behavior of a Charged Two-Level Fluctuator in an AI-AI Ox-AI Single-Electron Transistor in the Normal and Superconducting State
| Content Provider | Semantic Scholar |
|---|---|
| Author | Kenyon, Mike Jonathan Cobb, Loren Amar, A. Song, D. Zimmerman, Neil M. Lobb, Christopher J. Wellstood, F. C. |
| Copyright Year | 2007 |
| Abstract | We have studied the behavior of a charged two-level fluctuator in an AI-AIOz-AI single-electl'on transistor (SET) in the normal state over a temperature range from 85 mK to 3 K. The ftuctuator caused the SET's island charge to shift by IlQo = 0',1 :I: 0.025 e with an escape rate out of each state which was periodic in the gate voltage. We compare our results to a model which assumes the ftuctuator resides in one of the tunnel junctions and discuss model predictions for when the device is in the superconducting state. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://ws680.nist.gov/publication/get_pdf.cfm?pub_id=24115 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |