NDLI: Nanocrystal-and Dislocation-Related Luminescence in Si Matrix with InAs Nanocrystals

Please wait, while we are loading the content...

Nanocrystal-and Dislocation-Related Luminescence in Si Matrix with InAs Nanocrystals

Content Provider	Semantic Scholar
Author	Zuk, Jerzy Pyszniak, Krzysztof Kulik, Margarete
Copyright Year	2011
Abstract	We have studied the influence of ion implantation and post-implantation annealing regimes on the structural and optical properties of silicon matrix with ion-beam synthesized InAs nanocrystals. (100) Si wafers were implanted at 25 and 500 ◦C, subsequently with high fluences of As and In ions. After implantation the samples were processed by furnace and rapid thermal annealing at 900, 950 and 1050 ◦C. A part of the samples implanted at 25 ◦C was additionally exposed to H+2 ions (100 keV, 1.2 × 10 cm−2 in terms of atomic hydrogen). This procedure was performed to obtain an internal getter. In order to characterize the implanted samples transmission electron microscopy and low-temperature photoluminescence techniques were employed. It was demonstrated that by introducing getter, varying the ion implantation temperature, ion fluences and post-implantation annealing duration, and temperature it is possible to form InAs nanocrystals in the range of sizes of 2–80 nm and create various concentration and distribution of different types of secondary defects. The last ones cause in turn the appearance in photoluminescence spectra dislocation-related D1, D2 and D4 lines at 0.807, 0.870 and 0.997 eV, respectively.
File Format	PDF HTM / HTML
Alternate Webpage(s)	http://elib.bsu.by/bitstream/123456789/20683/1/Nanocrystal-%20and%20Dislocation-Related%20Luminescence.pdf
Language	English
Access Restriction	Open
Subject Keyword	Bands Dislocations Furnace Device Component Hydrogen Implants Ion beam Ion implantation Ions Kiloelectronvolt Nanocrystalline Materials Oral Wafer RCA Spectra 70 Rapid thermal processing Silicon Simulated annealing Transmission Electron Microscopy luminescence
Content Type	Text
Resource Type	Article

Central Library (ISO-9001:2015 Certified)
Indian Institute of Technology Kharagpur
Kharagpur, West Bengal, India | PIN - 721302

See location in the Map
03222 282435
Mail: support@ndl.gov.in

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in