Low-voltage organic thin-film transistors based on [n]phenacenes

Content Provider	Semantic Scholar
Author	Ruzaiqi, Afra Al Okamoto, Hideki Kubozono, Yoshihiro Zschieschang, Ute Klauk, Hagen Baran, Peter Gleskova, Helena
Copyright Year	2019
Abstract	Abstract Low-voltage p-channel organic thin-film transistors based on [n]phenacene (n = 5, 6 or 7) were fabricated on glass and on flexible poly(ethylene 2,6-naphthalate) (PEN) substrates. For the first time, these phenacenes were combined with two ultrathin gate dielectrics based on aluminium oxide and a monolayer of octadecyl-phosphonic acid in three different transistor structures. Regardless of the substrate and the transistor structure, the field-effect mobility is found to increase with increasing length of the conjugated [n]phenacene core, leading to the best performance for [7]phenacene. The largest average field-effect mobility we have obtained is 0.27 cm2/V⋅s for transistors on glass and 0.092 cm2/V⋅s for transistors on flexible PEN.
Starting Page	286
Ending Page	291
Page Count	6
File Format	PDF HTM / HTML
DOI	10.1016/j.orgel.2019.06.021
Volume Number	73
Alternate Webpage(s)	https://www.fkf.mpg.de/6828863/AlRuzaiqi-OrgElectronics-2019-286.pdf
Alternate Webpage(s)	https://doi.org/10.1016/j.orgel.2019.06.021
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article