NDLI: Electrochemical Behavior of Graphene/ZnO Nanofllowers Synthesized by an Efficient and Facile Two-Step Technique

Please wait, while we are loading the content...

Electrochemical Behavior of Graphene/ZnO Nanofllowers Synthesized by an Efficient and Facile Two-Step Technique

Content Provider	Semantic Scholar
Author	Zhang, Yuchuan
Copyright Year	2019
Abstract	An efficient and simple route was advanced to uniformly synthesize graphene/ZnO nanofllowers and an electrochemical impedance spectroscopy (EIS) technique was used to investigate the electrical properties. X-ray diffraction patterns indicated a broad and strong peak at 26° value, which conformed with the graphene (002) plane. A very strong Raman band appeared at 1,594 and 1,358 cm, that corresponded to the independent G and D bands, respectively. The photoluminescence results show that the graphene/ZnO nanostructures has a lower electrons/holes recombination rate under UV light irradiation, that may be attributed to graphene sheets in graphene/ZnO nanoflowers becoming the separation mechanisms of the photogenerated electrons/holes. Cyclic voltammetry plots indicate approximately rectangular shape, showing perfect supercapacitive behavior. The charge transfer resistance in the graphene/ZnO nanoflower electrode is 175 kΩ, which is considerably smaller than those of ZnO nanostructures (684 kΩ) electrode, demonstrating the better conductivity in the graphene/ZnO nanoflower electrode. The graphene/ZnO nanoflowers showed excellent photocatalytic activity for the degradation of MB under the visible light which can be ascribed to the high absorption intensity of graphene/ZnO nanoflowers in visible light region.
Starting Page	6874
Ending Page	6883
Page Count	10
File Format	PDF HTM / HTML
DOI	10.20964/2019.07.78
Alternate Webpage(s)	http://www.electrochemsci.org/papers/vol14/140706874.pdf
Alternate Webpage(s)	https://doi.org/10.20964/2019.07.78
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

Central Library (ISO-9001:2015 Certified)
Indian Institute of Technology Kharagpur
Kharagpur, West Bengal, India | PIN - 721302

See location in the Map
03222 282435
Mail: support@ndl.gov.in

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in