NDLI: Optical and photodetector properties of stripe-like InS crystal

Content Provider	Semantic Scholar
Author	Ho, Ching-Hwa Chen, Yu Chih Ho, Jhih-Hao
Copyright Year	2016
Abstract	Stripe-like InS crystals have been grown by physical vapor transport method. Transmission electron microscopy, scanning electron microscopy, optical microscope and Raman measurement characterize the outline shape and orthorhombic structure of the as-grown InS. A prototype photo-metal-semiconductor-field-effect transistor (Photo-MESFET) has been made by a stripe and layer-like InS crystal with Ag for the drain and source contacts and Au for the gate metal. Transmittance results determine its band gap, and the value of about 1.78 eV renders InS more sensitive to near infrared (NIR) than to visible-light optical response. VSD–ISD measurements show p-channel conduction behavior of the InS Photo-MESFET. Under the illumination of a tungsten lamp of power density ∼3 mW cm−2, the transconductance gain reaches gm = 0.272 ± 0.005 μA V−1.
Starting Page	97445
Ending Page	97448
Page Count	4
File Format	PDF HTM / HTML
DOI	10.1039/C6RA22743K
Volume Number	6
Alternate Webpage(s)	http://www.rsc.org/suppdata/c6/ra/c6ra22743k/c6ra22743k1.pdf
Alternate Webpage(s)	https://doi.org/10.1039/C6RA22743K
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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