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Transport properties of organic conductor a-(BEDT-TTF)2I3 and y-(BEDT-TTF)2I3 under hydrostatic pressure or uniaxial strain
| Content Provider | Semantic Scholar |
|---|---|
| Author | Tajimaa, N. Tajimab, A. Tamuraa, M. Nishiob, Y. Kajitab, K. |
| Copyright Year | 2003 |
| Abstract | Pressure controlled switching between a metallic state and a semiconducting state was successfully realised on organic conductors a(BEDT-TTF)2I3 and y-(BEDT-TTF)2I3. Under high hydrostatic pressures, a-(BEDT-TTF)2I3 behaves as an ultra-narrow gap (about 1 meVat p 1⁄4 18 kbar) semiconductor. It is characterised by strongly temperature(T)-dependent carrier density. It decreases by about 10 times between 300 and 1 K. When strained in b-axis, on the other hand, this material was found to behave as a quasi-two-dimensional (Q2D) metal with a large Fermi surface. The carrier density is independent of T while conductivity increases by about 10 times between 300 and 4 K. y-(BEDTTTF)2I3 exhibits a similar change. Under the ambient pressure, it is a typical Q2D metal and changes to a narrow gap semiconductor under pressures above about 5 kbar. # 2002 Elsevier Science B.V. All rights reserved. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www2.riken.jp/lab-www/molecule/pdf2/members/SM133-134_147.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |