NDLI: Layout decomposition and mask synthesis for double and triple exposure with image reversal in a single photoresist layer

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Layout decomposition and mask synthesis for double and triple exposure with image reversal in a single photoresist layer

Content Provider	Semantic Scholar
Author	Ndoye, Coumba Orlowski, Marius
Copyright Year	2011
Abstract	Double Patterning is the most promising lithography solution for 22 nm technology node and beyond. It can both increase the pitch density and print intricate 2D patterns reliably, far beyond the capabilities of the conventional Double Exposure methods. Recently, a double exposure method in a single photoresist layer using image reversal DESIR has been proposed which matches the printing capabilities of the double patterning technology while using only one photoresist layer, resulting in a significant process simplification. In general, layout decomposition poses a major obstacle in terms of layout complexity, layout verification overhead, and mask decomposability design related issues. Here, a layout decomposition method and mask selection algorithms for the DESIR approach that can be easily implemented in any mask design tool are proposed. The method is distinctly different from extant layout decomposition techniques because of the intricate photoresist properties subject to several exposures and an intervening critical image reversal baking step. The challenge in the layout decomposition is that the exposure seen by each area before and after the reversal bake determines the solubility of the resist. This circumstance constitutes a welcomed benefit of optimum pattern printability by using an internal corner counting algorithm.
File Format	PDF HTM / HTML
DOI	10.1117/12.895146
Volume Number	8166
Alternate Webpage(s)	https://spie.org/Documents/Membership/BacusNewsletters/BACUS-Newsletter-April-2012.pdf
Alternate Webpage(s)	https://doi.org/10.1117/12.895146
Journal	Photomask Technology
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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