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A novel PHINES flash memory cell with low power program/erase, small pitch, two-bits-per-cell for data storage applications
| Content Provider | Semantic Scholar |
|---|---|
| Author | Yeh, Chih-Chieh Wang, Tahui Tsai, Wen-Jer Lu, Tao-Cheng Chen, Ming-Shiang Liao, Yi-Ying Ting, Wenchi Ku, Yen-Hui Joseph Lu, Chih-Yuan |
| Copyright Year | 2005 |
| Abstract | A novel programming by hot-hole injection nitride electron storage (PHINES) Flash memory technology is developed. The memory bit size of 0.046 /spl mu/m/sup 2/ is fabricated based on 0.13-/spl mu/m technology. PHINES cell uses a nitride trapping storage cell structure. Fowler-Nordheim (FN) injection is performed to raise V/sub t/ in erase while programming is done by lowering a local V/sub t/ through band-to-band tunneling-induced hot hole (BTBT HH) injection. Two-bits-per-cell feasibility, low-power and high-speed program/erase, good endurance and data retentivity make it a promising candidate for Flash EEPROM technology in gigabit era applications. |
| Starting Page | 541 |
| Ending Page | 546 |
| Page Count | 6 |
| File Format | PDF HTM / HTML |
| Volume Number | 52 |
| Alternate Webpage(s) | https://ir.nctu.edu.tw/bitstream/11536/13882/1/000227748500015.pdf |
| Journal | IEEE Transactions on Electron Devices |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
