NDLI: Mask-free photolithographic exposure using a matrix-addressable micropixellated AlInGaN ultraviolet light-emitting diode

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Mask-free photolithographic exposure using a matrix-addressable micropixellated AlInGaN ultraviolet light-emitting diode

Content Provider	Semantic Scholar
Author	Jeon, C. W. Gu, Erdan Dawson, Martin D.
Copyright Year	2005
Abstract	We report the integration of a UV-curable polymer microlens array onto a matrix-addressable, 368-nm-wavelength, light-emitting diode device containing 64×64 micropixel elements. The geometrical and optical parameters of the microlenses were carefully chosen to allow the highly divergent emission from each micropixel to be collimated into a narrow beam of about 8-μm diam, over a distance of more than 500μm. This device is demonstrated as a photolithographic exposure tool, where the pattern-programmable array plays the role both of light source and photomask. A simple pattern comprised of two disks having 16-μm diam and 30-μm spacing was transferred into an i-line photoresist.
Starting Page	221105
Ending Page	221105
Page Count	1
File Format	PDF HTM / HTML
DOI	10.1063/1.1942636
Alternate Webpage(s)	http://diyhpl.us/~bryan/papers2/optics/photolithography/Mask-free%20photolithographic%20exposure%20using%20a%20matrix-addressable%20micropixellated%20AllnGaN%20ultraviolet%20light-emitting%20diode.pdf
Alternate Webpage(s)	http://diyhpl.us/~bryan/papers2/bibliographies/papers/GetPDFServlet.pdf
Alternate Webpage(s)	https://doi.org/10.1063/1.1942636
Volume Number	86
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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