Sensitivity of Si-based zero-bias backward diodes for microwave detection

Content Provider	Semantic Scholar
Author	Park, Si-Young Yu, Ronghua Chung, Sung-Yong Berger, Paul R. Thompson Fay, Patrick
Copyright Year	2007
Abstract	Silicon-based backward diodes incorporating delta-doped active regions for direct detection of microwave radiation with zero external DC bias have been demonstrated at room temperature and characterised for their sensitivity. The resulting backward diodes, which were grown by low temperature molecular beam epitaxy, show a high zero-bias curvature coefficient (gamma) of 23.2 V -1 with a junction resistance (R j ) of 687 kOmega for a 5 mum diameter mesa diode. The microwave-frequency voltage sensitivity is reported for the first time; a measured sensitivity of 2376 V/W is obtained at zero-bias when driven from a 50 Omega source. An intrinsic 3 dB cutoff frequency of 1.8 GHz (5 mum diameter) was determined based on an extracted series resistance of 290 Omega and a junction capacitance of 0.307 pF using a small-signal model established to fit the measured S-parameters
Starting Page	53
Ending Page	54
Page Count	2
File Format	PDF HTM / HTML
DOI	10.1049/el:20070299
Alternate Webpage(s)	http://eewww.eng.ohio-state.edu/~berger/papers/2007mar_el_park_sensitivity_zero-biased_Si-based_BDs.pdf
Alternate Webpage(s)	http://www2.ece.ohio-state.edu/~berger/papers/2007mar_el_park_sensitivity_zero-biased_Si-based_BDs.pdf
Alternate Webpage(s)	https://doi.org/10.1049/el%3A20070299
Volume Number	43
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article