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3D Monte-Carlo device simulations using an effective quantum potential including electron-electron interactions
| Content Provider | Semantic Scholar |
|---|---|
| Author | Heitzinger, Clemens Ringhofer, Christian Ahmed, Shaikh Vasileska, Dragica |
| Copyright Year | 2007 |
| Abstract | Effective quantum potentials describe the physics of quantum-mechanical electron transport in semiconductors more than the classical Coulomb potential. An effective quantum potential was derived previously for the interaction of an electron with a barrier for use in particle-based Monte Carlo semiconductor device simulators. The method is based on a perturbation theory around thermodynamic equilibrium and leads to an effective potential scheme in which the size of the electron depends upon its energy and which is parameter-free. Here we extend the method to electron-electron interactions and show how the effective quantum potential can be evaluated efficiently in the context of many-body problems. The effective quantum potential was used in a three-dimensional Monte-Carlo device simulator for calculating the electron-electron and electron-barrier interactions. Simulation results for an SOI transistor are presented and illustrate how the effective quantum potential changes the characteristics compared to the classical potential. |
| Starting Page | 15 |
| Ending Page | 18 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.1007/s10825-006-0058-x |
| Alternate Webpage(s) | https://math.la.asu.edu/~chris/HeitzingerEQP_paper060519.pdf |
| Alternate Webpage(s) | https://doi.org/10.1007/s10825-006-0058-x |
| Volume Number | 6 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
