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InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal
| Content Provider | Semantic Scholar |
|---|---|
| Author | Oliver, Rachel A. Briggs, G. Andrew D. Kappers, Menno J. Humphreys, Colin J. Yasin, Shazia Rice, James H. Smith, J. David Taylor, Robert A. |
| Copyright Year | 2003 |
| Abstract | We describe the growth of InGaN quantum dots (QDs) by metalorganic vapor phase epitaxy. A thin InGaN epilayer is grown on a GaN buffer layer and then annealed at the growth temperature in molecular nitrogen inducing quantum dot formation. Microphotoluminescence studies of these QDs reveal sharp peaks with typical linewidths of ∼700 μeV at 4.2 K, the linewidth being limited by the spectral resolution. Time-resolved photoluminescence suggests that the excitons in these structures have lifetimes in excess of 2 ns at 4.2 K. |
| Starting Page | 755 |
| Ending Page | 757 |
| Page Count | 3 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.1595716 |
| Volume Number | 83 |
| Alternate Webpage(s) | http://andrewbriggs.org/wp-content/uploads/2016/02/16-375Oliver2003APL.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.1595716 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
