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Electrically pumped photonic crystal nanocavity light sources using a laterally doped pi-n junction
| Content Provider | Semantic Scholar |
|---|---|
| Author | Ellis, Bryan Sarmiento, Tomas Mayer, Marie Zhang, Bingyang Vuckovic, Jelena |
| Copyright Year | 2010 |
| Abstract | using a laterally doped p-i-n junction Bryan Ellis, Tomas Sarmiento, Marie Mayer, Bingyang Zhang, James Harris, Eugene Haller, and Jelena Vuckovic Edward L. Ginzton Laboratory, Stanford, California 94305, USA Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA and Department of Materials Science, University of California, Berkeley, Berkeley, California 94720, USA |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://web.stanford.edu/group/nqp/jv_files/papers/bryan_lateral_EL.pdf |
| Alternate Webpage(s) | http://web.stanford.edu/group/nqp/jv_files/papers/bryan_lateral_EL.pdf |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | BSD Bruce Ellis Doping (semiconductor) Electrical engineering Electricity Harris affine region detector Isoelectric Point PIN diode Science pump (device) |
| Content Type | Text |
| Resource Type | Article |
