NDLI: Nano-Patterned Sapphire Substrates-Induced Strain-Related Quantum-Confined-Stark-Effect Behaviors of InGaN-Based Light-Emitting Diodes

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Nano-Patterned Sapphire Substrates-Induced Strain-Related Quantum-Confined-Stark-Effect Behaviors of InGaN-Based Light-Emitting Diodes

Content Provider	Semantic Scholar
Author	Su, Vin-Cent Chen, Yu Jiao Lee, Ming-Lun You, Yao-Hong Kuan, Chieh-Hsiung Chen, Po-Hsun Hsieh, Cheng-Ju Lin, Ray-Ming Yu, S. K. Felix
Copyright Year	2012
Abstract	This paper reports nano-patterned sapphire substrates (NPSSs)-induced strain-related quantum-confined-stark-effect (QCSE) behaviors of InGaN-based light-emitting diodes (LEDs). From the analysis of the micro-photoluminescence (μ-PL) system, the crystal quality and light output power are continuously enhanced due to the decrease of space between two air hexagonal holes. Compared with the conventional sample without NPSSs, the maximum of the enhanced PL relative intensity is up to 61% through the sample of 100nm-space air hexagonal arrays. With the increase of μ-PL excitation power density, the PL peak energy through the sample of 100nm-space air hexagonal arrays exhibits an offset of only 24.93meV, and the PL peak intensity keeps increasing linearly. As verified by the experimentally measured data, QCSE within MQWs reaches to the weakest state, based on the InGaN-based LED, which is grown upon NPSSs with the space of 100nm, compared with the InGaN-based LED with conventional sapphire substrates (CSSs) due to the higher NPSSs-induced strain, which results in the lower polarization fields.
File Format	PDF HTM / HTML
DOI	10.7567/SSDM.2012.I-1-5
Alternate Webpage(s)	https://confit.atlas.jp/guide/event-img/ssdm2012/I-1-5/public/pdf_archive?type=in
Alternate Webpage(s)	https://doi.org/10.7567/SSDM.2012.I-1-5
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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