Loading...
Please wait, while we are loading the content...
Similar Documents
Optical properties of (1 1 ¯ 0 1) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates
| Content Provider | Semantic Scholar |
|---|---|
| Author | Chiu, C. H. Lin, Chien-Chung Chen, Yi-Chen Ling, Shih-Chun Kuo, Hao-Chung Lu, Tien-Chang Wang, S. C. Liao, Wei-Tsai Tanikawa, Tomoyuki Honda, Yoshio Yamaguchi, Masahito Sawaki, Nobuhiko |
| Copyright Year | 2011 |
| Abstract | We present a study of high quality (1 1 ¯ 0 1) GaN films and the InGaN/GaN multiple quantum wells (MQWs) using epitaxial lateral overgrowth (ELO) technique by atmospheric pressure metal organic chemical vapor deposition (MOCVD). The smooth coalescence of the stripes and surface morphology was measured by scanning electron microscope (SEM) and atomic force microscopy (AFM). Due to reduction in internal electric field, semipolar InGaN/GaN MQWs have higher radiative recombination rate from time-resolved photoluminescence (TRPL) measurement. In addition, from degree of polarization (DOP) measurement, we observed higher polarization ratio attributed to the induced anisotropic compressive strain. |
| Starting Page | 500 |
| Ending Page | 504 |
| Page Count | 5 |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/j.jcrysgro.2010.10.054 |
| Alternate Webpage(s) | https://ir.nctu.edu.tw/bitstream/11536/241/1/000289653900105.pdf |
| Alternate Webpage(s) | https://doi.org/10.1016/j.jcrysgro.2010.10.054 |
| Volume Number | 318 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
