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Physical properties of Bi2Te2.85Se0.15 single crystals doped with Cu, Cd, In, Ge, S, or Se
| Content Provider | Semantic Scholar |
|---|---|
| Author | Svechnikova, T. E. Konstantinov, P. P. Alekseeva, G. T. |
| Copyright Year | 2000 |
| Abstract | Bi2Te2.85Se0.15 crystals doped with Cu, Cd, In, Ge, S, or Se were grown by the floating-crucible technique. The effective segregation coefficients for the dopants were determined. The thermoelectric power, electrical conductivity, and thermal conductivity of the samples were measured in the temperature range from 77 to 350 K. The effects of the dopants studied on the temperature dependences of the electrical properties and thermoelectric figure of merit were examined. The bending strength of the doped crystals was measured. |
| Starting Page | 556 |
| Ending Page | 560 |
| Page Count | 5 |
| File Format | PDF HTM / HTML |
| DOI | 10.1007/BF02757952 |
| Volume Number | 36 |
| Alternate Webpage(s) | https://page-one.springer.com/pdf/preview/10.1007/BF02757952 |
| Alternate Webpage(s) | https://doi.org/10.1007/BF02757952 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
