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Plasma-Enhanced Atomic Layer Deposition of Boron Carbide for Interconnect Applications
| Content Provider | Semantic Scholar |
|---|---|
| Author | Dorsett, Lauren |
| Copyright Year | 2018 |
| Abstract | As the semiconductor industry endeavors to scale integrated circuit dimensions— decreasing layer thicknesses while increasing the aspect ratio of fillable features—the need for novel interconnect materials with highly specialized properties continues to rise. Meeting the requirements for the numerous types of materials needed, including low-k dielectrics, etch stops, metal diffusion barriers, hardmasks, spacer layers, and other pattern-assist layers, with traditional silicon-based materials is becoming increasingly challenging. As an alternative to silicon, amorphous hydrogenated boron carbide (aBC:H), grown through plasma-enhanced chemical vapor deposition (PECVD), has been demonstrated to possess excellent dielectric properties, combined with very high Young’s modulus, electrical properties rivaling those of SiOC:H variants, very good chemical stability, and unique and useful etch chemistry. However, a problem with PECVD growth that will limit its long-term utility is its inability to scale while maintaining uniform, conformal coatings for very thin films. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://mospace.umsystem.edu/xmlui/bitstream/handle/10355/70646/Thesis_2018_Dorsett.pdf?isAllowed=y&sequence=1 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
