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Photoluminescence from wurtzite GaN under hydrostatic pressure
| Content Provider | Semantic Scholar |
|---|---|
| Author | Kim, Sangsig Herman, Irving P. Tuchman, J. Ari Doverspike, K. Rowland, Larry Burton Gaskill, David Kurt |
| Copyright Year | 1995 |
| Abstract | The photoluminescence spectrum of undoped epitaxial wurtzite GaN layers on sapphire was measured for applied hydrostatic pressures up to 73 kbar at 9 K and up to 62 kbar at 300 K. The pressure dependences of the I2 exciton recombination line and the ‘‘yellow’’ band (2.2 eV band at ambient pressure) were examined at 9 and 300 K, and the series of donor‐acceptor‐pair emission lines was analyzed at 9 K. From the I2 lines, it was found that the band gap increases with pressure by 4.4±0.1 meV/kbar at 9 K and 4.7±0.1 meV/kbar at 300 K. |
| Starting Page | 380 |
| Ending Page | 382 |
| Page Count | 3 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.114635 |
| Volume Number | 67 |
| Alternate Webpage(s) | http://www.columbia.edu/~iph1/Download/Kim-TuchmanAPL67-380-1995.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.114635 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
