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Growth of gallium phosphide layers by chemical beam epitaxy on oxide patterned (001)silicon substrates
| Content Provider | Semantic Scholar |
|---|---|
| Author | Narayanan, Vijay Sukidi, Nkadi Hu, Chimin Dietz, Nikolaus Bachmann, Klaus Jurgen Mahajan, Subhash Shingubara, Shouso |
| Copyright Year | 1998 |
| Abstract | GaP layers grown by chemical beam epitaxy in [110] channels fabricated on oxide-patterned (001)silicon substrates have been examined in cross-section by conventional and high resolution transmission electron microscopy. Results indicate that the layers are single crystalline. For the imaging conditions used, [110] cross-sectional micrographs show that growths in contact with the oxide exhibit twinning on one edge-on variant, whereas faults or twins are observed on two such variants in the layers which nucleate on the silicon substrate. Arguments for rationalizing these observations are developed, and their implications to improve the quality of the layer by confining faults or twins by the oxide sidewall are discussed. |
| Starting Page | 207 |
| Ending Page | 209 |
| Page Count | 3 |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/S0921-5107(98)00169-X |
| Volume Number | 54 |
| Alternate Webpage(s) | http://physics.gsu.edu/dietz/data/NALD_pub053.pdf |
| Alternate Webpage(s) | https://doi.org/10.1016/S0921-5107%2898%2900169-X |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
