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Optical and electrical properties of highly nitrogen-doped ZnO thin films grown by plasma-assisted molecular beam epitaxy
| Content Provider | Semantic Scholar |
|---|---|
| Author | Jiao, Shujie Lu, Youming Zhang, Zhengzhong Li, Binghui Zhang, Jiying Zhao, Dongxu Shen, Dezhen Fan, Xiwu |
| Copyright Year | 2007 |
| Abstract | Nitrogen-doped ZnO thin films with different nitrogen concentrations were fabricated by plasma-assisted molecular beam epitaxy. Hall effect measurements show p-type conduction for samples with low doping concentration. In highly doped ZnO, the p-type conduction converted to high resistance or unstable p-type behavior. This result indicates that highly doped samples are heavily compensated. In the low temperature photoluminescence spectrum, a donor-acceptor pair (DAP) emission band shows a strong redshift and broadening with increasing nitrogen doping concentration. The large shift of the DAP emission is explained by the Coulomb-potential fluctuation model related to compensated semiconductors. |
| Starting Page | 113509 |
| Ending Page | 113509 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.2819367 |
| Volume Number | 102 |
| Alternate Webpage(s) | http://ir.ciomp.ac.cn/bitstream/181722/26592/1/Jiao-2007-Optical%20and%20electric.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.2819367 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
