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Orientation-dependent stress relaxation in hetero-epitaxial 3C-SiC films
| Content Provider | Semantic Scholar |
|---|---|
| Author | Iacopi, Francesca Walker, Glenn M. Wang, Li Malesys, Laura Ma, Shujun Cunning, Ben Vaughan Iacopi, Alan |
| Copyright Year | 2013 |
| Abstract | Residual stresses in epitaxial 3C-SiC films on silicon, for chosen growth conditions, appear determined by their growth orientation. Stress evaluation locally with Raman spectroscopy, and across a 150 mm wafer with curvature measurements, indicate that thin films can be grown on Si(100) with residual tensile stresses as low as 150 MPa. However, films on Si(111) retain a considerably higher stress, around 900 MPa, with only minor decrease versus film thickness. Stacking faults are indeed geometrically a less efficient relief mechanism for the biaxial strain of SiC films grown on Si(111) with 〈111〉 orientation. Residual stresses can be tuned by the epitaxial process temperatures. |
| Starting Page | 011908 |
| Ending Page | 011908 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.4774087 |
| Volume Number | 102 |
| Alternate Webpage(s) | https://opus.lib.uts.edu.au/bitstream/10453/117133/1/1.4774087.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.4774087 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
