NDLI: Rapid crystallization of silicon films using pulsed current-induced joule heating

Content Provider	Semantic Scholar
Author	Sameshima, Toshiyuki Kaneko, Yusaku Andoh, Nobuyuki
Copyright Year	2002
Abstract	Abstract Crystallization of silicon films formed on glass substrates was achieved by rapid-joule heating of Cr strips adjacently formed via 200-nm-thick SiO 2 intermediate layers. 3-μs-pulsed voltages applied to the Cr strips caused a high joule heating intensity about 1×10 6 W / cm 2 . Transmission electron microscopy measurements confirmed a crystalline grain size of 50–100 nm. 1-μm-long crystalline grain growth was observed just beneath of the edge of Cr strips. The activation of phosphorus atoms according to crystallization was also achieved.
Starting Page	746
Ending Page	750
Page Count	5
File Format	PDF HTM / HTML
DOI	10.1016/S0022-3093(01)01109-7
Volume Number	299302
Alternate Webpage(s)	http://web.tuat.ac.jp/~sameken/publication/PDF/2002-2.pdf
Alternate Webpage(s)	https://doi.org/10.1016/S0022-3093%2801%2901109-7
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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