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Simulation of proposed confined-chalcogenide phase-change random access memory for low reset current by finite element modelling
| Content Provider | Semantic Scholar |
|---|---|
| Author | Sone, Hayato Hosaka, Sumio |
| Copyright Year | 2006 |
| Abstract | A confined-chalcogenide (CC) cell structure for reducing the reset current of phase-change random access memory (PRAM) is proposed in this investigation. Both single normal-bottom-contact (NBC) (for reference) and proposed CC PRAM cells are simulated by two-dimensional finite element modelling. The simulated amorphous region of the NBC cell after reset operation is generally a semiellipse, which agrees very well with the reported experimental results. The CC cell has a rectangular amorphous region after reset operation. The reset operation current of the CC cell is much lower than that of the NBC cell. The CC cell structure needs a low reset current and a low power consumption and has a simple configuration. |
| Starting Page | 6177 |
| Ending Page | 6181 |
| Page Count | 5 |
| File Format | PDF HTM / HTML |
| DOI | 10.1143/JJAP.45.6177 |
| Volume Number | 45 |
| Alternate Webpage(s) | http://www.ps.eng.gunma-u.ac.jp/~yinyou/2006-JJAP-45-6177%20Simulation%20of%20Proposed%20Confined-Chalcogenide.pdf |
| Alternate Webpage(s) | https://doi.org/10.1143/JJAP.45.6177 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |