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Scanning Tunneling Microscopy and Low Energy Electron Microscopy of Ir and Ag adsorbed on Ge ( 110 ) and Ge ( 111 ) Surfaces
| Content Provider | Semantic Scholar |
|---|---|
| Author | Huffman, Emilie |
| Copyright Year | 2010 |
| Abstract | The atomic behaviors of the surfaces Ge(111) and Ge(110) with adsorbents of Ag and Ir were examined through the techniques of Scanning Tunneling Microscopy (STM) and Low Energy Electron Microscopy (LEEM). LEEM analysis revealed the phase transitions of the Ge(111) surface as it was dosed with Ag up to a coverage of 1 monolayer (ML). Desorption of Ag from the surface was observed upon subsequent heating. STM images at approximately 0.5 ML of adsorbent revealed the coexistence of three phases: c(2x8), (3x1), and (4x4). STM images of Ir on Ge(111) revealed competing hexagonal and square lattice structures for the germanium, as well as the growth characteristics and mode of the iridium. Finally, LEEM analysis revealed the method of growth of Ag on the surface Ge(110). The adsorbent was found to organize on the substrate in parallel lines which varied in thickness and length according to the dosing temperature. An additional phase transition for the substrate was found at 406C. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://london.ucdavis.edu/~reu/REU10/huffman.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
