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Electron mobility in a AlGaAs/GaAs/AlGaAs quantum well
| Content Provider | Semantic Scholar |
|---|---|
| Author | Mokerov, V. G. Galiev, G. B. Poz̆ela, J. Poz̆ela, K. Jucienė, V. |
| Copyright Year | 2002 |
| Abstract | An oscillatory dependence of the electron mobility on the quantum well (QW) thickness in a AlGaAs/GaAs/AlGaAs heterostructure with double-sided modulation doping has been observed experimentally. A steep decrease in mobility with increasing electron concentration in the QW is established. The conditions for an increase in mobility on introducing a thin barrier into the QW are determined. The first experimental observation of an increase in mobility by a factor of 1.3 in a QW of thickness L=26 nm upon introducing a thin (1–1.5 nm) AlAs barrier is reported. |
| Starting Page | 674 |
| Ending Page | 678 |
| Page Count | 5 |
| File Format | PDF HTM / HTML |
| DOI | 10.1134/1.1485669 |
| Volume Number | 36 |
| Alternate Webpage(s) | https://page-one.springer.com/pdf/preview/10.1134/1.1485669 |
| Alternate Webpage(s) | https://doi.org/10.1134/1.1485669 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
