Xe Plasma FIB-SEM with Improved Resolution of Both Ion and Electron Columns

Content Provider	Semantic Scholar
Author	Jiruše, Jaroslav Havelka, Miloslav Polster, Josh Hrncír, T.
Copyright Year	2015
Abstract	Combined plasma Xe ion source FIB (Focused Ion Beam) with SEM (Scanning Electron Microscope) was introduced three years ago [1]. It proved to be an important tool for ultra-fast milling, especially for the semiconductor industry. Besides 50-times higher milling rate compared to traditional Ga ion FIB, it eliminates the conductive contamination of integrated circuits and it is useful for processing of compounds such as SiGe, (In)GaAs and (In, Al)GaN. We demonstrated its utilization also for other fields, for example preparation of large TEM lamella [2] or the first large-scale FIB tomography [3].
File Format	PDF HTM / HTML
Alternate Webpage(s)	http://diyhpl.us/~nmz787/M&M%202015/7337/1995.pdf
Language	English
Access Restriction	Open
Subject Keyword	Columns Focused Ion Beam-Scanning Electron Microscope Focused ion beam Integrated circuit Ionization Source Ions Plasma Active Scanning Electron Microscopy Semiconductor industry Silicon-germanium Tomography Xenon
Content Type	Text
Resource Type	Article