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Cu(In,Ga)Se2 films prepared by sputtering with a chalcopyrite Cu(In,Ga)Se2 quaternary alloy and In targets
| Content Provider | Semantic Scholar |
|---|---|
| Author | Lin, Yi-Cheng Shen, Chih-Hsiung Wang, Lan Peng, Chris |
| Copyright Year | 2011 |
| Abstract | This study reports the successful preparation of Cu(In,Ga)Se2 (CIGS) thin film solar cells by magnetron sputtering with a chalcopyrite CIGS quaternary alloy target. Bi-layer Mo films were deposited onto soda lime glass. A CIGS quaternary alloy target was used in combination with a stack indium target for compensating the loss of indium during annealing process. A one-stage annealing process was performed to form CIGS chalcopyrite phase. Experimental results show that the optimal adhesion strength, residual stress, and resistivity were obtained at a thickness ratio of 67% of bi-layer Mo films and a working pressure of 0.13 Pa. The CIGS precursor was layered through selenization at 798 K for 20 min. The stoichiometry ratios of the CIGS film were Cu/(In + Ga) = 0.91 and Ga/(In + Ga) = 0.23, which approached the device-quality stoichiometry ratio (Cu/(In + Ga) <0.95, and Ga/(In + Ga) <0.3). The resistivity of the sample was 11.8 Ωcm, with a carrier concentration of 3.6 × 1017 cm−3 and mobility of 1.45 cm2V−1s−1. The resulting film exhibited p-type conductivity. |
| Starting Page | 493 |
| Ending Page | 500 |
| Page Count | 8 |
| File Format | PDF HTM / HTML |
| DOI | 10.1007/s10854-011-0424-8 |
| Alternate Webpage(s) | http://blog.ncue.edu.tw/sys/lib/read_attach.php?id=17822 |
| Alternate Webpage(s) | https://doi.org/10.1007/s10854-011-0424-8 |
| Volume Number | 23 |
| Journal | Journal of Materials Science: Materials in Electronics |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
