NDLI: Hole gas accumulation in Si/Ge core-shell and Si/Ge/Si core-double shell nanowires.

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Hole gas accumulation in Si/Ge core-shell and Si/Ge/Si core-double shell nanowires.

Content Provider	Semantic Scholar
Author	Zhang, Xiao-Long Jevasuwan, Wipakorn Pradel, Ken C. Subramani, Thiyagu Takei, Toshiaki Fukata, Naoki
Copyright Year	2018
Abstract	Core-shell nanowires (NWs) composed of silicon and germanium can be used to realize high electron (hole) mobility transistors (HEMTs) by suppressing impurity scattering due to their band offset structure and selective doping. Boron doped p-type Si/intrinsic-Ge (i-Ge) core-shell NW structures are selected to study this phenomenon. To produce HEMT devices, hole gas accumulation must be controlled in the impurity undoped i-Ge shell layers. Spectral change in the Ge optical phonon is detected with increased B doping in p-Si core NWs, showing hole gas accumulation in this system. We also fabricate p-Si/i-Ge/p-Si core-double shell NWs to more clearly demonstrate hole gas accumulation in the i-Ge layers.
Starting Page	21062
Ending Page	21068
Page Count	7
File Format	PDF HTM / HTML
DOI	10.1039/c8nr05590d
PubMed reference number	30187068
Journal	Medline
Volume Number	10
Issue Number	45
Alternate Webpage(s)	http://www.rsc.org/suppdata/c8/nr/c8nr05590d/c8nr05590d1.pdf
Alternate Webpage(s)	https://doi.org/10.1039/c8nr05590d
Journal	Nanoscale
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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