NDLI: Synthesis of Graphene on Ni/SiO 2 /Si Substrate by Inductively-Coupled Plasma-Enhanced Chemical Vapor Deposition

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Synthesis of Graphene on Ni/SiO 2 /Si Substrate by Inductively-Coupled Plasma-Enhanced Chemical Vapor Deposition

Content Provider	Semantic Scholar
Author	Park, Young-Soo Huh, Hoon-Hoe Kim, Eui-Tae
Copyright Year	2009
Abstract	Graphene has been effectively synthesized on Ni/SiO/Si substrates with CH (1 SCCM) diluted in Ar/H(10%) (99 SCCM) by using an inductively-coupled plasma-enhanced chemical vapor deposition. Graphene was formed on the entire surface of the 500 nm thick Ni substrate even at 700 , although CH and Ar/H gas were supplied under plasma of 600 W for 1 second. The Raman spectrum showed typical graphene features with D, G, and 2D peaks at 1356, 1584, and 2710 cm, respectively. With increase of growth temperature to 900 , the ratios of the D band intensity to the G band intensity and the 2D band intensity to the G band intensity were increased and decreased, respectively. The results were strongly correlated to a rougher and coarser Ni surface due to the enhanced recrystallization process at higher temperatures. In contrast, highquality graphene was synthesized at 1000 on smooth and large Ni grains, which were formed by decreasing Ni deposition thickness to 300 nm.
Starting Page	522
Ending Page	526
Page Count	5
File Format	PDF HTM / HTML
DOI	10.3740/MRSK.2009.19.10.522
Volume Number	19
Alternate Webpage(s)	http://ocean.kisti.re.kr/downfile/volume/mrsk/GJRHBQ/2009/v19n10/GJRHBQ_2009_v19n10_522.pdf
Alternate Webpage(s)	https://doi.org/10.3740/MRSK.2009.19.10.522
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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