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Effect of Nb Doping on Crystalline Orientation, Electric and Fatigue Properties of PZT Thin Films Prepared by Sol-Gel Process
| Content Provider | Semantic Scholar |
|---|---|
| Author | Wang, Xubao Wang, Feng-He Dou, Jinhe Xu, Weijian |
| Copyright Year | 2017 |
| Abstract | Pb(NbxZr0.52Ti0.48)O3 (PNZT) (x = 0 %, 1 %, 2 %, 3 %, 4 %, 5 %) thin films were prepared in a sol-gel process to investigate the effects of Nb doping on the crystalline orientation, electric and fatigue properties of lead zirconate titanate (PZT) films. X-ray diffraction (XRD) and scanning electron microscope (SEM) analyses showed that PNZT films with Nb doping concentration below 5 % exhibited a dense perovskite structure with (100) preferred orientation. The maximum dielectric constant was obtained in 4 % Nb-doped PZT film with a precision impedance analyzer. Remnant polarization and fatigue resistance were enhanced significantly with 2 % Nb dopant. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://www.ceramic-science.com/php/article_pdf.php?article_id=100601&hash=8673960721 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |