High-performance vertical polymer nanorod transistors based on air-stable conjugated polymer

Content Provider	Semantic Scholar
Author	Chao, Yu-Chiang Chung, Chin-Ho Zan, Hsiao-Wen Meng, Hsin-Fei Ku, Ming-Che
Copyright Year	2011
Abstract	A vertical polymer nanorod transistor was realized based on an air-stable poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′-bithiophene] with a high highest occupied molecular orbital energy level. The influence of the work function of the emitter on the performances of the space-charge-limited transistor was investigated. When MoO3/Al was used as the top emitter and indium tin oxide was used as the bottom collector, the operating voltage of 0.6 V, the on/off current ratio of 4 × 104, and the switching swing of 105 mV/decade were achieved. A low-power-consumption inverter was also demonstrated.
Starting Page	233308
Ending Page	233308
Page Count	1
File Format	PDF HTM / HTML
DOI	10.1063/1.3668086
Volume Number	99
Alternate Webpage(s)	https://ir.nctu.edu.tw/bitstream/11536/15363/1/000298006100085.pdf
Alternate Webpage(s)	https://doi.org/10.1063/1.3668086
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article