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Structural and electronic properties of the Si-rich 6H-SiC(0001) surface
| Content Provider | Semantic Scholar |
|---|---|
| Author | Ahn, Joung Real Lee, Sang Soon Hwang, Chul Gyun Min, Je Hong Chung, Jinwook W. |
| Copyright Year | 2002 |
| Abstract | Abstract We have investigated structural and electronic properties of the Si-rich 6H-SiC(0 0 0 1)-3×3 surface and the clean 3 × 3 R30° surface with high resolution electron-energy-loss spectroscopy. We find that the 3×3 and the 3 × 3 R30° surfaces prepared at 980 °C are 2D Mott–Hubbard insulators primarily by evaluating the effective on-site Coulomb repulsion energy ( U * ) energy directly from our electron-energy-loss spectroscopy data. We find that a criterion of U * ≫ t * ( t * : intersite hopping energy) is well satisfied for these surfaces thus confirming the typical nature of a Mott–Hubbard insulator. |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/S0039-6028(02)02088-5 |
| Volume Number | 516 |
| Alternate Webpage(s) | http://entech.skku.ac.kr/public/2002_09_SurfS516_L529.pdf |
| Alternate Webpage(s) | https://doi.org/10.1016/S0039-6028%2802%2902088-5 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
