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Organic monolayer dielectric for high-performance carbon nanotube transistors
| Content Provider | Semantic Scholar |
|---|---|
| Author | Weitz, R. Thomas Klauk, Hagen Zschieschang, Ute Burghard, Marko |
| Abstract | During the past years, single-walled carbon nanotubes (SWCNTs) have emerged as highly promising components of nanoscale devices. In particular, field effect transistors (FETs) based on semiconducting SWCNTs have attracted strong interest due to their excellent device characteristics. 2 Such devices are usually implemented using a conventional threeelectrode configuration comprising source (S) and drain (D) electrodes contacting the semiconductor (called channel, in our case the SWCNT, marked by a white arrow in Figure 1), plus a gate (G) electrode that is electrically insulated from source and drain by the gate dielectric (Figure 1). By applying a voltage to the gate electrode, the electrostatic potential in the channel and thereby its conductivity can be tuned. In maximizing the performance of a transistor based on SWCNTs, the contacts made to the SWCNT channel, the integrity of the SWCNT itself, as well as the gate dielectric are of utmost importance. Three major requirements for a high-performance gate dielectric are: 1) High capacitance, which allows for transistor operation at low gate voltages, 2) good insulator properties to avoid undesirable gate leakage currents and 3) compatibility with a wide range of substrates. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www.fac-media.com/editors/Examples/720.pdf |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Electric Capacitance Electricity Extravasation Field effect (semiconductor) Gate dielectric Medical Device Incompatibility Problem Nanotubes Nanotubes, Carbon Requirement Semiconductor Spectral leakage Topological insulator Transistor Transistors electrode voltage |
| Content Type | Text |
| Resource Type | Article |
