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Reduction of persistent photoconductivity in ZnO thin film transistor-based UV photodetector
| Content Provider | Semantic Scholar |
|---|---|
| Author | Reyes, Pavel Ivanoff Ku, Chieh Jen Duan, Ziqing Garfunkel, Eric L. Lu, Yicheng |
| Copyright Year | 2012 |
| Abstract | We report a ZnO-based thin film transistor UV photodetector with a back gate configuration. The thin-film transistor (TFT) aspect ratio W/L is 150 μm/5 μm and has a current on-off ratio of 1010. The detector shows UV-visible rejection ratio of 104 and cut-off wavelength of 376 nm. The device has low dark current of 5 × 10−14 A. The persistent photoconductivity is suppressed through oxygen plasma treatment of the channel surface which significantly reduces the density of oxygen vacancy confirmed by XPS measurements. The proper gate bias-control further reduces recovery time. The UV-TFT configuration is particularly suitable for making large-area imaging arrays. |
| Starting Page | 031118 |
| Ending Page | 031118 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.4737648 |
| Volume Number | 101 |
| Alternate Webpage(s) | https://rutchem.rutgers.edu/images/PDFs/faculty/garfunkel-pubs/2012/ApplPhysLett_101_031118.pdf |
| Alternate Webpage(s) | http://garf.rutgers.edu/sites/garf.rutgers.edu/files/2012pubs/ApplPhysLett_101_031118.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.4737648 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |