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Electrical resistivity of Ti-Ni binary and Ti-Ni-X (X = Fe, Cu) ternary shape memory alloys
| Content Provider | Semantic Scholar |
|---|---|
| Author | Wu, Szu-Wei |
| Copyright Year | 2006 |
| Abstract | Abstract The electrical resistivities of Ti–Ni binary and Ti–Ni–X (X = Fe, Cu) ternary shape memory alloys (SMAs) are investigated. Experimental results reveal that the Ti–Ni and Ti–Ni–X SMAs exhibit different electrical resistivity ( ρ ) characteristics due to their different martensitic transformation behaviors. The increase of ρ during the B2 → R transformation of Ti–Ni SMAs is about 10–16 μΩ cm, which is a change of about 12–20%. For a two-stage transformation of B2 ↔ R ↔ B19′, there is a sharp increase of ρ during B2 → R transformation, and then a rapid decrease of ρ during R → B19′ transformation. However, for the Ti-40 at.%,Ni-10 at.%,Cu alloy, which exhibits a B2 ↔ B19 ↔ B19′ two-stage transformation, there is a small variation of ρ during B2 → B19 transformation, but a significant variation of ρ during B19 → B19′ transformation. These phenomena may be ascribed to their different structures, deformation defects, accommodated twin variants and crystal distortions. |
| Starting Page | 536 |
| Ending Page | 539 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/j.msea.2005.12.059 |
| Volume Number | 438 |
| Alternate Webpage(s) | https://scholars.lib.ntu.edu.tw/bitstream/123456789/67777/1/130.pdf |
| Alternate Webpage(s) | https://doi.org/10.1016/j.msea.2005.12.059 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
