Synthesis of Boron-Aluminum Nitride Thin Film by Chemical Vapour Deposition Using Gas Bubbler

Content Provider	Semantic Scholar
Author	Shanmugan, S. Mutharasu, D.
Copyright Year	2019
Abstract	Boron (B) doped aluminumnitride (B-AlN) thin lms were synthesized on silicon (Si) substrates through chemical vapor deposition (CVD) at 773 °K (500 °C). Tert-butylamine (tBuNH2) solution was used as a nitrogen source and delivered through the gas bubbler. B-AlN thin lms were prepared on Si-100 substrates by varied gas mixture ratio of three precursors. The structural properties of the lms were investigated from the X-ray diffraction (XRD) data and veri ed the formation of polycrystalline and mixed phases of hexagonal (100) & (110) oriented AlN and orthogonal (002) & cubic (333) oriented BN. The calculated crystallite size was smaller and hence the dislocation density was higher with lowest total gas mixture ratio (25 sccm). Improved surface properties were detected for the lm deposited at lowest total gas mixture ratio by eld emission scanning electron microscope (FESEM) and atomic force microscope (AFM) analysis. The lm composition showed the existence of a higher concentration of B in the lm prepared with lower total gas mixture ratio which was con rmed by energy dispersive X-ray spectroscopy (EDX).
Starting Page	43
Ending Page	54
Page Count	12
File Format	PDF HTM / HTML
DOI	10.22068/ijmse.16.2.43
Alternate Webpage(s)	http://www.iust.ac.ir/ijmse/article-1-1153-en.pdf
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Alternate Webpage(s)	http://ijmse.iust.ac.ir/article-1-1153-en.pdf
Alternate Webpage(s)	http://meteng.iust.ac.ir/ijmse/article-1-1153-en.pdf
Alternate Webpage(s)	https://doi.org/10.22068/ijmse.16.2.43
Volume Number	16
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article