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Photoluminescence studies of erbium-doped GaAs under hydrostatic pressure
| Content Provider | Semantic Scholar |
|---|---|
| Author | Culp, Thomas Dudley Hommerich, Uwe Redwing, Joan M. Kuech, Thomas F. Bray, Kevin Lewis |
| Copyright Year | 1997 |
| Abstract | The photoluminescence properties of metal-organic chemical vapor deposition GaAs:Er were investigated as a function of temperature and applied hydrostatic pressure. The 4I13/2→4I15/2Er3+emission energy was largely independent of pressures up to 56 kbar and temperatures between 12 and 300 K. Furthermore, no significant change in the low temperature emission intensity was observed at pressures up to and beyond the Γ-X crossover at ∼41 kbar. In contrast, AlxGa1−xAs:Er alloying studies have shown a strong increase in intensity near the Γ-X crossover at x∼0.4. These results suggest that the enhancement is most likely due to a chemical effect related to the presence of Al, such as residual oxygen incorporation, rather than a band structure effect related to the indirect band gap or larger band gap energy. Modeling the temperature dependence of the 1.54 μm Er3+ emission intensity and lifetime at ambient pressure suggested two dominant quenching mechanisms. At temperatures below approximately 150 K, thermal quenc... |
| Starting Page | 368 |
| Ending Page | 374 |
| Page Count | 7 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.365821 |
| Volume Number | 82 |
| Alternate Webpage(s) | https://minds.wisconsin.edu/bitstream/handle/1793/10636/file_1.pdf?isAllowed=y&sequence=1 |
| Alternate Webpage(s) | https://doi.org/10.1063/1.365821 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
