Loading...
Please wait, while we are loading the content...
Similar Documents
Some Physical Properties of CuInSeTe thin Films Prepared by Spray Pyrolysis
| Content Provider | Semantic Scholar |
|---|---|
| Author | Tembhurkar, Yashwantrao. D. Meshram, Anil S. Khobragade, A. R. Shriwas, Ranjeeta S. Chimankar, Omprakash P. Porwal, Swatantra Kumar |
| Copyright Year | 2015 |
| Abstract | Spray pyrolysis is simple and inexpensive method to depositing thin films on large area. A quaternary compound semiconductor CuInSeTe thin film has been deposited by this method. The tetragonal structure of the films was confirmed with 013 preferred orientations. The films were polycrystalline. The resistivity of the films was measured for temperature ranging from 77 K to 473 K. The activation energy 92 meV calculated from Arrhenius plot for the temperature range 303 to 473 K shows Selenium interstitial act like acceptors. In the very low temperature 77 K to 125 K conduction takes place through variable range hopping conduction mechanism. The Hall mobility and Carrier concentration at room temperature were calculated by Van-der Pauw-Hall Method. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://www.ijsr.net/conf/ISU-2015/ISU-129.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
