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Degradation of subcells and tunnel junctions during growth of GaInP/Ga(In)As/GaNAsSb/Ge 4‐junction solar cells
| Content Provider | Semantic Scholar |
|---|---|
| Author | García, Iván Ochoa, Manuel Morales Lombardero, Iván Cifuentes, Luis Hinojosa, Manuel Calvopiña Cano, Pilar Rey-Stolle, Ignacio Algora, Carlos Johnson, Andrew James Davies, Iwan R. Tan, Kian Hua Loke, Wan Khai Wicaksono, Satrio Yoon, Soon Fatt |
| Copyright Year | 2017 |
| Abstract | A GaInP/Ga(In)As/GaNAsSb/Ge 4J solar cell grown using the combined MOVPE + MBE method is presented. This structure is used as a test bench to assess the effects caused by the integration of subcells and tunnel junctions into the full 4J structure. A significant degradation of the Ge bottom subcell emitter is observed during the growth of the GaNAsSb subcell, with a drop in the carrier collection efficiency at the high energy photon range that causes a ~15% lower Jsc and a Voc drop of ~50 mV at 1-sun. The Voc of the GaNAsSb subcell is shown to drop by as much as ~140 mV at 1-sun. No degradation in performance is observed in the tunnel junctions, and no further degradation is neither observed for the Ge subcell during the growth of the GaInP/Ga(In)As subcells. The hindered efficiency potential in this lattice-matched 4J architecture due to the degradation of the Ge and GaNAsSb subcells is discussed. (C) John Wiley & Sons Ltd |
| Starting Page | 887 |
| Ending Page | 895 |
| Page Count | 9 |
| File Format | PDF HTM / HTML |
| DOI | 10.1002/pip.2930 |
| Alternate Webpage(s) | http://oa.upm.es/47859/1/PiP_diluteNitride4J_IvanGarcia_revised_paraRepositorioDigital.pdf |
| Alternate Webpage(s) | https://doi.org/10.1002/pip.2930 |
| Volume Number | 25 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
