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A Novel method for the Higher Order components extraction of the Channel current in GaAs MESFET
| Content Provider | Semantic Scholar |
|---|---|
| Author | Kim, Youngsik Kim, Jiyoun Kim, Sungwoo Kim, Bumman |
| Copyright Year | 2001 |
| Abstract | We propose a new simple and accurate method for the higher order Taylor coefficient extraction of the channel current in GaAs MESFET. In this method, the nonlinear channel currents are directly measured through a hole current sensor and spectrum analyzer. Taylor coefficients up to 3rd order have been successfully extracted from the measured currents of the low frequency(4MHz, 25MHz) two-tone test, and a resonator is added to the load to remove the gate frequency component from the drain voltage, which makes the problem simple. The proposed extraction procedure is simple and straightforward. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://amsacta.unibo.it/38/1/G_11_1.pdf |
| Alternate Webpage(s) | https://core.ac.uk/download/pdf/143605363.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
