NDLI: Effects of trimethylgallium flow rate on a-Plane GaN Growth on r-plane sapphire during one-sidewall-seeded epitaxial lateral overgrowth

Content Provider	Semantic Scholar
Author	Hsu, Hsiao-Chiu Su, Yan-Kuin Huang, S. J. Chuang, Ricky W. Cheng, Shin-Hao Cheng, Chiao-Yang
Copyright Year	2011
Abstract	The high crystalline quality of a-plane GaN growth on r-plane sapphire has been demonstrated successfully by using one-sidewall-seeded epitaxial lateral overgrowth (OSELOG). The dislocation density of OSELOG-grown GaN film is 3–4 orders of magnitude lower than that of the as-grown film and the coalescence thickness of OSELOG-grown GaN is less than 5 µm. Low temperature cathodoluminescence (CL) shows that the optimum trimethylgallium (TMGa) flow rate during OSELOG plays a significant role in enhancing the crystalline quality of a-plane GaN. The crystalline quality of a-plane GaN can be effectively improved using OSELOG compared with the other ELOG approaches.
Starting Page	035501
Ending Page	035501
Page Count	1
File Format	PDF HTM / HTML
DOI	10.1143/APEX.4.035501
Alternate Webpage(s)	http://ir.lib.ksu.edu.tw/bitstream/987654321/17373/2/Effects%20of%20Trimethylgallium.pdf
Alternate Webpage(s)	https://doi.org/10.1143/APEX.4.035501
Volume Number	4
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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