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Radiant Power Degradation of Silicon-Doped Gallium Arsenide and Gallium Aluminum Arsenide Infrared Light-Emitting Diodes.
| Content Provider | Semantic Scholar |
|---|---|
| Author | Resimont, William N. |
| Copyright Year | 1987 |
| Abstract | Abstract : This work investigates the use of the capacitance-voltage (C-V), current -voltage (I-V), and radiant power-current-voltage (P-I-V) diode characteristics as a means of modeling the general radiant power degradation of silicon-doped gallium arsenide and gallium aluminum arsenide (GaAs:Si, GaA1As:Si) IREDs. The procedure consists of measuring the initial characteristics, stressing with various operating current densities at room temperature, then periodically repeating the measurements. Control diodes that are not stressed are tested to determine the precision of the measuring apparatus and the normal variations in diode behavior. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www.dtic.mil/get-tr-doc/pdf?AD=ADA186726 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |