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Anti-reflection layer at the TCO/Si interface for high efficiency thin-film solar cells deposited on rough lp-cvd front ZnO
| Content Provider | Semantic Scholar |
|---|---|
| Author | Bühlmann, Peter Billet, Adrian Bailat, Julien Ballif, Christophe |
| Copyright Year | 2007 |
| Abstract | ZnO layers with a wide range of surface roughness and morphologies can be deposited by low pressure chemical vapor deposition (LP-CVD). In this paper, we investigate the effect of a low-resistivity TiO2-ZnO bi-layer incorporated as an anti-reflection coating between the rough ZnO front transparent conductive oxide (TCO) and the silicon layer, for thin film p-i-n microcrystalline silicon solar cells. The TiO2 layers are deposited by reactive rf- sputtering from a Ti target with a H2O/Ar gas mixture. We study the potential of this coating with respect to TCO surface roughness and morphology and we show that with a TiO2 layer of 55 nm, having a refractive index of ~2.5 at 550 nm we can decrease the reflectance of typical μc-Si:H solar cell at 550 nm down to 6 %, corresponding to reflectance at the glass interfaces only. Depending on the TCO properties, increases in short-circuit current density ranging from 1.7 to of 3.8 % are obtained, the latter value is obtained for a ZnO layer particularly suitable for the growth of microcrystalline silicon solar cells. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://infoscience.epfl.ch/record/133980/files/preprint_463.pdf?version=1 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
