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High Electron Mobility Thin‐Film Transistors Based on Solution‐Processed Semiconducting Metal Oxide Heterojunctions and Quasi‐Superlattices
| Content Provider | Semantic Scholar |
|---|---|
| Author | Lin, Yen-Hung Faber, Hendrik Labram, John G. Stratakis, Emmanuel Sygellou, Labrini Kymakis, Emmanuel Hastas, N. A. Li, Ruipeng Zhao, Kui Amassian, Aram Treat, Neil D. McLachlan, Martyn A. Anthopoulos, Thomas D. |
| Copyright Year | 2015 |
| Abstract | High mobility thin-film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin-film transistors is reported that exploits the enhanced electron transport properties of low-dimensional polycrystalline heterojunctions and quasi-superlattices (QSLs) consisting of alternating layers of In2O3, Ga2O3, and ZnO grown by sequential spin casting of different precursors in air at low temperatures (180-200 °C). Optimized prototype QSL transistors exhibit band-like transport with electron mobilities approximately a tenfold greater (25-45 cm2 V-1 s-1) than single oxide devices (typically 2-5 cm2 V-1 s-1). Based on temperature-dependent electron transport and capacitance-voltage measurements, it is argued that the enhanced performance arises from the presence of quasi 2D electron gas-like systems formed at the carefully engineered oxide heterointerfaces. The QSL transistor concept proposed here can in principle extend to a range of other oxide material systems and deposition methods (sputtering, atomic layer deposition, spray pyrolysis, roll-to-roll, etc.) and can be seen as an extremely promising technology for application in next-generation large area optoelectronics such as ultrahigh definition optical displays and large-area microelectronics where high performance is a key requirement. |
| File Format | PDF HTM / HTML |
| DOI | 10.1002/advs.201500058 |
| PubMed reference number | 27660741 |
| Journal | Medline |
| Volume Number | 2 |
| Alternate Webpage(s) | https://repository.kaust.edu.sa/bitstream/handle/10754/555958/Lin_et_al-2015-Advanced_Science.pdf?isAllowed=y&sequence=1 |
| Alternate Webpage(s) | https://repository.kaust.edu.sa/bitstream/handle/10754/555958/Lin_et_al-2015-Advanced_Science(1).pdf?isAllowed=y&sequence=2 |
| Alternate Webpage(s) | https://doi.org/10.1002/advs.201500058 |
| Journal | Advanced science |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
